document number: 94362 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-may-10 1 "half-bridge" igbt int-a-pak (standard speed igbt), 200 a GA200HS60S1PBF vishay high power products features ? generation 4 igbt technology ? standard: optimized for hard switching speed dc to 1 khz ? very low conduction losses ? industry standard package ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? increased operating efficiency ? direct mounting to heatsink ? performance optimized as output inverter stage for tig welding machines product summary v ces 600 v i c dc 480 a v ce(on) at 200 a, 25 c 1.13 v int-a-pak absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c t c = 25 c 480 a t c = 116 c 200 pulsed collector current i cm 800 peak switching current i lm 800 gate to emitter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 minute 2500 maximum power dissipation p d t c = 25 c 830 w t c = 85 c 430 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v br(ces) v ge = 0 v, i c = 1 ma 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 200 a - 1.13 1.21 v ge = 15 v, i c = 200 a, t j = 125 c - 1.08 1.18 gate threshold voltage v ge(th) i c = 0.25 ma 3 4.5 6 collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 0.025 1 ma v ge = 0 v, v ce = 600 v, t j = 125 c - - 10 gate to emitter leakage current i ges v ge = 20 v - - 250 na www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94362 2 revision: 03-may-10 GA200HS60S1PBF vishay high power products "half-bridge" igbt int-a-pak (standard speed igbt), 200 a fig. 1 - typical output characteristics fig. 2 - typical transfer characteristics switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units total gate charge q g i c = 200 a v cc = 400 v v ge = 15 v - 1600 1700 nc gate to emi tter charge q ge - 260 340 gate to collector charge q gc - 580 670 turn-on switching loss e on i c = 200 a, v cc = 480 v, v ge = 15 v r g = 10 freewheeling diode: 30eph06, t j = 25 c -30- mj turn-off switching loss e off -50- total switching loss e ts -80- turn-on switching loss e on i c = 200 a, v cc = 480 v, v ge = 15 v r g = 10 freewheeling diode: 30eph06, t j = 125 c -34- mj turn-off switching loss e off -104- total switching loss e ts - 138 151 input capacitance c ies v ge = 0 v v cc = 30 v f = 1.0 mhz - 32 500 - pf output capacitance c oes -2080- reverse transfer capacitance c res -380- thermal and mechanical specifications parameter symbol min. typ. max. units operating junction temperature range t j - 40 - 150 c storage temperature range t stg - 40 - 125 junction to case per leg r thjc - - 0.15 c/w case to sink r thcs -0.1- mounting torque case to heatsink - - 4 nm case to terminal 1, 2, 3 - - 3 weight - 185 - g 10 100 1000 0.6 0.8 1.0 1.2 1.4 1.6 v ce - collector to emitter voltage (v) i c - collector to emitter current (a) t j = 25 c v ge = 15 v 500 s pulse width t j = 125 c 1000 100 10 1 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v ge - gate to emitter voltage (v) i c - collector to emitter current (a) t j = 125 c t j = 25 c www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94362 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-may-10 3 GA200HS60S1PBF "half-bridge" igbt int-a-pak (standard speed igbt), 200 a vishay high power products fig. 3 - case temperature vs. maximum collector current fig. 4 - typical collector to emitter voltage vs. junction temperature fig. 5 - typical gate charge vs. gate to emitter voltage fig. 6 - typical switching losses vs. gate resistance fig. 7 - typical switching losses vs. collector to emitter current 160 140 120 100 100 200 300 400 500 80 60 40 20 0 0 t c - case temperature (c) maximum dc collector current (a) t j - junction temperature (c) v ce - collector to emitter voltage (v) 1.6 1.4 1.2 1.0 0.8 20 40 60 80 100 120 140 160 400 a 200 a 120 a q g - total gate charge (nc) 0 300 600 900 1200 1500 1800 v ge - gate to emitter voltage (v) 16 14 12 10 8 6 4 2 0 typical value t j = 25 c v ce = 480 v v ge = 15 v i c = 200 a e off typical freewheeling diode 30eph06 r g - gate resistance ( ) 0 1020304050 50 40 45 35 30 25 20 switching losses (mj) e on typical 0 10 20 30 40 50 60 70 80 e on typical e off typical t j = 125 c v ce = 480 v v ge = 15 v v ge = 10 freewheeling diode 30eph06 50 75 100 175 200 125 150 i c - collector to emitter current (a) switching losses (mj) functional diagram 3 4, 5 6, 7 1 2 electrical diagram 6 7 4 5 3 1 2 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94362 4 revision: 03-may-10 GA200HS60S1PBF vishay high power products "half-bridge" igbt int-a-pak (standard speed igbt), 200 a ordering information table links to related documents dimensions www.vishay.com/doc?95067 1 - essential part number igbt modules 2 - current rating (200 = 200 a) 3 - circuit configuration (h = half bridge without f/w diode) 4 - int-a-pak 5 - voltage code (60 = 600 v) 6 - speed/type (s = standard speed igbt) 8 - pbf = lead (pb)-free 7 - assy location italy device code 5 13 24 678 ga 200 h s 60 s 1 pbf www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 95067 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 15-feb-08 1 int-a-pak igbt/thyristor outline dimensions vishay semiconductors dimensions in millimeters (inches) 80 (3.15) ? 6.5 (0.25 dia) 30 (1.18) 9 (0.33) 7 (0.28) 28 (1.10) 29 (1.15) 37 (1.44) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 7 6 5 4 123 23 (0.91) 23 (0.91) 17 (0.67) 35 (1.38) 14.5 (0.57) 3 screws m6 x 10 66 (2.60) 94 (3.70) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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